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Silicon Germanium Forming

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  2. Silicon Germanium Forming

Patent US20090104760 - Vertical cvd appparatus …

Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method may include depositing a ...

Patent CN103377897A - Forming method of silicon ...

Methods of forming field effect transistors include forming an insulated gate electrode on a non ... Embedded silicon germanium n-type filed effect transistor for ...

Silicon - Wikipedia

This page explores the trend from non-metallic to metallic behaviour in the Group 4 elements - carbon (C), silicon (Si), germanium (Ge), tin (Sn) and lead (Pb).

Silicon and Germanium Nanowires - TMS

Silicon belongs to the IVA family in the periodic table, which consists of carbon, silicon, germanium, ... forming the weakly ionized orthosilicic acid, ...

Patent WO2000042231A2 - Polycrystalline silicon …

Polycrystalline silicon germanium films for forming micro-electromechanical systems US 6210988 B1. Abstract.

Patente US6210988 - Polycrystalline silicon …

Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method may include depositing a ...

Patent US8501594 - Methods for forming silicon …

Germanium (Ge), a chemical element between silicon and tin in Group 14 (IVa) of the periodic table, a silvery-gray metalloid, intermediate in properties between the ...

Germanium - Wikipedia

The silicon germanium channel region has increased charge mobility with respect to conventional ... Method for forming an epitaxial silicon-germanium layer: EP0334682A2:

Patent US6709935 - Method of locally forming a …

The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (poly) in ...

NEW Patent CD for Method of forming HCMOS …

Silicene and germanene: Silicon and germanium ... graphene's "cousins" are considered to be single layers of sp 2-hybridized silicon and germanium forming a 2D ...

Method of forming a non-selective silicon …

Polycrystalline silicon germanium films for forming micro-electromechanical systems ... Method for forming silicon germanium layers at low temperatures, ...

Silicon/germanium Oxide Particle Inks And …

FIG. 1 depicts a flowchart of a method of forming a set of silicon-germanium semiconductor fins, according to embodiments of the present disclosure.

Method of Forming Mono-Crystalline Germanium …

A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction ...

SILICON-GERMANIUM FIN FORMATION - …

Polycrystalline silicon germanium films for forming micro-electromechanical systems Abstract. This invention relates to micro-electromechanical systems using ...

Patent US6210988 - Polycrystalline silicon …

A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a ...

Stability of intermediate phases forming on …

Silicon and Germanium Solid state electronics arises from the unique properties of silicon and germanium, each of which has four valence electrons and which form ...

Rapid alloying of silicon with germanium in microwave ...

Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source ...

Patent US6210988 - Polycrystalline silicon …

TY - CHAP. T1 - Silicon and germanium nanocrystal inks for low cost solar cells. AU - Pi,Xiaodong. AU - Holman,Zachary. AU - Kortshagen,Uwe. PY - 2010

Patent US5792679 - Method for forming silicon …

The method includes the step of forming a trench in a layer of epitaxial material. ... a base material that includes silicon and germanium is blanket deposited, ...

Silicon-germanium fin formation / International …

Title: Silicon-germanium fin formation. Abstract: Forming a set of semiconductor fins is disclosed. Forming the set of semiconductor fins can include forming a base ...

Silicon - University of Denver

The invention encompasses at least two particular methods of forming silicon-germanium layer 44. In the first method, chemical vapor deposition is utilized.

Silicene and germanene: Silicon and germanium …

Method of Forming Mono-Crystalline Germanium or Silicon Germanium A method is presented for forming mono-crystalline germanium or silicon germanium in a trench.

Patent US8501594 - Methods for forming silicon …

SILICON-GERMANIUM FIN FORMATION ... Embodiments of the present disclosure are directed toward a method of forming a set of silicon-germanium (SiGe) ...

The trend from non-metal to metal in Group 4 - …

Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods

Patent US8501594 - Methods for forming silicon …

Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method may include depositing a ...

Forming strained and relaxed silicon and silicon …

Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method may include depositing a ...

Patente US6753234 - Method of forming the …

A silicon germanium layer is deposited directly on a gate dielectric layer formed over a semiconductor material of a substrate. A mixture of germaine and disilane ...

Patent US20100317177 - Methods for forming …

Rapid alloying of silicon with germanium in microwave field using single ... silicon–germanium alloys have ... germanium gets dissolved into silicon lattice forming

Seedless method of forming a silicon germanium …

This invention relates to micro-electromechanical systems using silicon-germanium films. The invention features a process for forming a micro-electromechanical system ...

Patent US7767541 - Methods for forming …

A method of forming a silicon-germanium epitaxial layer using dichlorosilane as a silicon source gas. A semiconductor seed layer (15) is formed on a portion of a ...

Patent US8513073 - Silicon germanium channel …

1. A method for depositing a silicon germanium layer on a substrate, comprising:depositing a first layer comprising silicon and germanium atop the …

Silicon and germanium nanocrystal inks for low …

Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods

Patent US20120138886 - Silicon and silicon …

Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant US 5792679 A

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