Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method may include depositing a ...
Methods of forming field effect transistors include forming an insulated gate electrode on a non ... Embedded silicon germanium n-type filed effect transistor for ...
This page explores the trend from non-metallic to metallic behaviour in the Group 4 elements - carbon (C), silicon (Si), germanium (Ge), tin (Sn) and lead (Pb).
Silicon belongs to the IVA family in the periodic table, which consists of carbon, silicon, germanium, ... forming the weakly ionized orthosilicic acid, ...
Polycrystalline silicon germanium films for forming micro-electromechanical systems US 6210988 B1. Abstract.
Germanium (Ge), a chemical element between silicon and tin in Group 14 (IVa) of the periodic table, a silvery-gray metalloid, intermediate in properties between the ...
The silicon germanium channel region has increased charge mobility with respect to conventional ... Method for forming an epitaxial silicon-germanium layer: EP0334682A2:
The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (poly) in ...
Silicene and germanene: Silicon and germanium ... graphene's "cousins" are considered to be single layers of sp 2-hybridized silicon and germanium forming a 2D ...
Polycrystalline silicon germanium films for forming micro-electromechanical systems ... Method for forming silicon germanium layers at low temperatures, ...
FIG. 1 depicts a flowchart of a method of forming a set of silicon-germanium semiconductor fins, according to embodiments of the present disclosure.
A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction ...
Polycrystalline silicon germanium films for forming micro-electromechanical systems Abstract. This invention relates to micro-electromechanical systems using ...
A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a ...
Silicon and Germanium Solid state electronics arises from the unique properties of silicon and germanium, each of which has four valence electrons and which form ...
Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source ...
TY - CHAP. T1 - Silicon and germanium nanocrystal inks for low cost solar cells. AU - Pi,Xiaodong. AU - Holman,Zachary. AU - Kortshagen,Uwe. PY - 2010
The method includes the step of forming a trench in a layer of epitaxial material. ... a base material that includes silicon and germanium is blanket deposited, ...
Title: Silicon-germanium fin formation. Abstract: Forming a set of semiconductor fins is disclosed. Forming the set of semiconductor fins can include forming a base ...
The invention encompasses at least two particular methods of forming silicon-germanium layer 44. In the first method, chemical vapor deposition is utilized.
Method of Forming Mono-Crystalline Germanium or Silicon Germanium A method is presented for forming mono-crystalline germanium or silicon germanium in a trench.
SILICON-GERMANIUM FIN FORMATION ... Embodiments of the present disclosure are directed toward a method of forming a set of silicon-germanium (SiGe) ...
Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods
A silicon germanium layer is deposited directly on a gate dielectric layer formed over a semiconductor material of a substrate. A mixture of germaine and disilane ...
Rapid alloying of silicon with germanium in microwave field using single ... silicon–germanium alloys have ... germanium gets dissolved into silicon lattice forming
This invention relates to micro-electromechanical systems using silicon-germanium films. The invention features a process for forming a micro-electromechanical system ...
A method of forming a silicon-germanium epitaxial layer using dichlorosilane as a silicon source gas. A semiconductor seed layer (15) is formed on a portion of a ...
1. A method for depositing a silicon germanium layer on a substrate, comprising:depositing a first layer comprising silicon and germanium atop the …
Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant US 5792679 A
